SI1078X-T1-GE3

Vishay Siliconix

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SI1078X-T1-GE3

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MOSFET N-CH 30V 1.02A SOT563F

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	110 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	142mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	240mW (Tc)
Series	TrenchFET®
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.02A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI1078