SI2301BDS-T1-E3

Vishay Siliconix

Product No:

SI2301BDS-T1-E3

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Package:

SOT-23-3 (TO-236)

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Description:

MOSFET P-CH 20V 2.2A SOT23-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	375 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 2.8A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	950mV @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	700mW (Ta)
Series	TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI2301