SI2305CDS-T1-GE3
detaildesc

SI2305CDS-T1-GE3

Vishay Siliconix

Product No:

SI2305CDS-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Datasheet:

pdf

Description:

MOSFET P-CH 8V 5.8A SOT23-3

Quantity:

Delivery:

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Payment:

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In Stock : 22041

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.154418

    $0.154418

  • 10

    $0.135115

    $1.35115

  • 50

    $0.115813

    $5.79065

  • 100

    $0.106162

    $10.6162

  • 500

    $0.101337

    $50.6685

  • 1000

    $0.096511

    $96.511

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 960 pF @ 4 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 35mOhm @ 4.4A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 8 V
Power Dissipation (Max) 960mW (Ta), 1.7W (Tc)
Series TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI2305