SI2306BDS-T1-GE3

Vishay Siliconix

Product No:

SI2306BDS-T1-GE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

Datasheet:

Description:

MOSFET N-CH 30V 3.16A SOT23-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	305 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.5 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	47mOhm @ 3.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	750mW (Ta)
Series	TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.16A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI2306