SI2315BDS-T1-BE3

Vishay Siliconix

Product No:

SI2315BDS-T1-BE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

Datasheet:

Description:

P-CHANNEL 1.8-V (G-S) MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	715 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	50mOhm @ 3.85A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	750mW (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)