SI2325DS-T1-BE3

Vishay Siliconix

Product No:

SI2325DS-T1-BE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

Datasheet:

Description:

P-CHANNEL 150-V (D-S) MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	750mW (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	530mA (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)