SI2336DS-T1-BE3
detaildesc

SI2336DS-T1-BE3

Vishay Siliconix

Product No:

SI2336DS-T1-BE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Datasheet:

pdf

Description:

MOSFET N-CH 30V 4.3A/5.2A SOT23

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 5797

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.232344

    $0.232344

  • 10

    $0.203301

    $2.03301

  • 50

    $0.174258

    $8.7129

  • 100

    $0.159737

    $15.9737

  • 500

    $0.152476

    $76.238

  • 1000

    $0.145215

    $145.215

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 42mOhm @ 3.8A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.25W (Ta), 1.8W (Tc)
Series TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta), 5.2A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI2336