SI2342DS-T1-BE3

Vishay Siliconix

Product No:

SI2342DS-T1-BE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

Datasheet:

Description:

N-CHANNEL 8-V (D-S) MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1101

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1070 pF @ 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.8 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	17mOhm @ 7.2A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	800mV @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	8 V
Power Dissipation (Max)	1.3W (Ta), 2.5W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Ta), 6A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±5V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)