SI2392BDS-T1-GE3

Vishay Siliconix

Product No:

SI2392BDS-T1-GE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

Datasheet:

Description:

N-CHANNEL 100-V (D-S) MOSFET SOT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	52mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.25W (Ta), 1.7W (Tc)
Series	TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta), 2.3A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI2392