SI3499DV-T1-BE3
detaildesc

SI3499DV-T1-BE3

Vishay Siliconix

Product No:

SI3499DV-T1-BE3

Manufacturer:

Vishay Siliconix

Package:

6-TSOP

Datasheet:

pdf

Description:

P-CHANNEL 1.5-V (G-S) MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 233

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.609

    $0.609

  • 10

    $0.532875

    $5.32875

  • 50

    $0.45675

    $22.8375

  • 100

    $0.418687

    $41.8687

  • 500

    $0.399656

    $199.828

  • 1000

    $0.380625

    $380.625

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 750mV @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 8 V
Power Dissipation (Max) 1.1W (Ta)
Series TrenchFET®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±5V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)