SI4155DY-T1-GE3
detaildesc

SI4155DY-T1-GE3

Vishay Siliconix

Product No:

SI4155DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Datasheet:

pdf

Description:

P-CHANNEL 30-V (D-S) MOSFET SO-8

Quantity:

Delivery:

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In Stock : 1581

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.429408

    $0.429408

  • 10

    $0.375732

    $3.75732

  • 50

    $0.322056

    $16.1028

  • 100

    $0.295218

    $29.5218

  • 500

    $0.281799

    $140.8995

  • 1000

    $0.26838

    $268.38

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 15mOhm @ 7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta), 4.5W (Tc)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10.2A (Ta), 13.6A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4155