SI4162DY-T1-GE3
detaildesc

SI4162DY-T1-GE3

Vishay Siliconix

Product No:

SI4162DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Datasheet:

pdf

Description:

MOSFET N-CH 30V 19.3A 8SO

Quantity:

Delivery:

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In Stock : 2146

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.343086

    $0.343086

  • 10

    $0.3002

    $3.002

  • 50

    $0.257314

    $12.8657

  • 100

    $0.235871

    $23.5871

  • 500

    $0.22515

    $112.575

  • 1000

    $0.214429

    $214.429

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1155 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.9mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19.3A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4162