SI4168DY-T1-GE3
detaildesc

SI4168DY-T1-GE3

Vishay Siliconix

Product No:

SI4168DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Datasheet:

pdf

Description:

MOSFET N-CH 30V 24A 8SO

Quantity:

Delivery:

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Payment:

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In Stock : 13551

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.669375

    $0.669375

  • 10

    $0.602438

    $6.02438

  • 50

    $0.5355

    $26.775

  • 100

    $0.468562

    $46.8562

  • 500

    $0.455175

    $227.5875

  • 1000

    $0.44625

    $446.25

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1720 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.7mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4168