SI4490DY-T1-E3
detaildesc

SI4490DY-T1-E3

Vishay Siliconix

Product No:

SI4490DY-T1-E3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Datasheet:

pdf

Description:

MOSFET N-CH 200V 2.85A 8SO

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 988

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.791562

    $1.791562

  • 10

    $1.612406

    $16.12406

  • 50

    $1.43325

    $71.6625

  • 100

    $1.254094

    $125.4094

  • 500

    $1.218263

    $609.1315

  • 1000

    $1.194375

    $1194.375

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 80mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 1.56W (Ta)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.85A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number SI4490