Vishay Siliconix
Product No:
SI4686DY-T1-E3
Manufacturer:
Package:
8-SOIC
Description:
MOSFET N-CH 30V 18.2A 8SO
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.885938
$0.885938
10
$0.797344
$7.97344
50
$0.70875
$35.4375
100
$0.620156
$62.0156
500
$0.602438
$301.219
1000
$0.590625
$590.625
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 15 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 13.8A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Supplier Device Package | 8-SOIC |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation (Max) | 3W (Ta), 5.2W (Tc) |
Series | TrenchFET® |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 18.2A (Tc) |
Mfr | Vishay Siliconix |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | SI4686 |