SI4850BDY-T1-GE3
Vishay Siliconix
Product No:
SI4850BDY-T1-GE3
Manufacturer:
Package:
8-SO
Datasheet:
Description:
MOSFET N-CH 60V 8.4A/11.3A 8SO
Quantity:
Delivery:
Payment:
In Stock : 2449
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.595224
$0.595224
10
$0.520821
$5.20821
50
$0.446418
$22.3209
100
$0.409216
$40.9216
500
$0.390616
$195.308
1000
$0.372015
$372.015
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 2.5W (Ta), 4.5W (Tc) |
| Series | TrenchFET® Gen IV |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 11.3A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI4850 |
SI4850BDY-T1-GE3 Related Blog
2000+Daily average RFQ Volume
300,000Standard Product Unit
280+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback