SI4925BDY-T1-GE3
detaildesc

SI4925BDY-T1-GE3

Vishay Siliconix

Product No:

SI4925BDY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Datasheet:

pdf

Description:

MOSFET 2P-CH 30V 5.3A 8-SOIC

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 282

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.6821

    $1.6821

  • 10

    $1.51389

    $15.1389

  • 50

    $1.34568

    $67.284

  • 100

    $1.17747

    $117.747

  • 500

    $1.143828

    $571.914

  • 1000

    $1.1214

    $1121.4

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 25mOhm @ 7.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 30V
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 1.1W
Current - Continuous Drain (Id) @ 25°C 5.3A
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Base Product Number SI4925