SI7386DP-T1-E3
detaildesc

SI7386DP-T1-E3

Vishay Siliconix

Product No:

SI7386DP-T1-E3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

MOSFET N-CH 30V 12A PPAK SO-8

Quantity:

Delivery:

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Payment:

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In Stock : 3059

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.122187

    $1.122187

  • 10

    $1.009969

    $10.09969

  • 50

    $0.89775

    $44.8875

  • 100

    $0.785531

    $78.5531

  • 500

    $0.763088

    $381.544

  • 1000

    $0.748125

    $748.125

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7mOhm @ 19A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.8W (Ta)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI7386