SI7434DP-T1-GE3
detaildesc

SI7434DP-T1-GE3

Vishay Siliconix

Product No:

SI7434DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

MOSFET N-CH 250V 2.3A PPAK SO-8

Quantity:

Delivery:

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Payment:

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In Stock : 6975

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.44125

    $2.44125

  • 10

    $2.197125

    $21.97125

  • 50

    $1.953

    $97.65

  • 100

    $1.708875

    $170.8875

  • 500

    $1.66005

    $830.025

  • 1000

    $1.6275

    $1627.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 155mOhm @ 3.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 250 V
Power Dissipation (Max) 1.9W (Ta)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number SI7434