SI7810DN-T1-E3
detaildesc

SI7810DN-T1-E3

Vishay Siliconix

Product No:

SI7810DN-T1-E3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Datasheet:

pdf

Description:

MOSFET N-CH 100V 3.4A PPAK1212-8

Quantity:

Delivery:

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Payment:

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In Stock : 5343

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.004063

    $1.004063

  • 10

    $0.903656

    $9.03656

  • 50

    $0.80325

    $40.1625

  • 100

    $0.702844

    $70.2844

  • 500

    $0.682762

    $341.381

  • 1000

    $0.669375

    $669.375

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 62mOhm @ 5.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 1.5W (Ta)
Series TrenchFET®
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number SI7810