SI8429DB-T1-E1
detaildesc

SI8429DB-T1-E1

Vishay Siliconix

Product No:

SI8429DB-T1-E1

Manufacturer:

Vishay Siliconix

Package:

4-Microfoot

Datasheet:

pdf

Description:

MOSFET P-CH 8V 11.7A 4MICROFOOT

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 10847

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.63

    $0.63

  • 10

    $0.55125

    $5.5125

  • 50

    $0.4725

    $23.625

  • 100

    $0.433125

    $43.3125

  • 500

    $0.413438

    $206.719

  • 1000

    $0.39375

    $393.75

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 4 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 35mOhm @ 1A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 800mV @ 250µA
Supplier Device Package 4-Microfoot
Drain to Source Voltage (Vdss) 8 V
Power Dissipation (Max) 2.77W (Ta), 6.25W (Tc)
Series TrenchFET®
Package / Case 4-XFBGA, CSPBGA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11.7A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±5V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI8429