SI8487DB-T1-E1
detaildesc

SI8487DB-T1-E1

Vishay Siliconix

Product No:

SI8487DB-T1-E1

Manufacturer:

Vishay Siliconix

Package:

4-Microfoot

Datasheet:

pdf

Description:

MOSFET P-CH 30V 4MICROFOOT

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1597

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.306858

    $0.306858

  • 10

    $0.2685

    $2.685

  • 50

    $0.230143

    $11.50715

  • 100

    $0.210965

    $21.0965

  • 500

    $0.201375

    $100.6875

  • 1000

    $0.191786

    $191.786

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2240 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 31mOhm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.2V @ 250µA
Supplier Device Package 4-Microfoot
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Series TrenchFET®
Package / Case 4-UFBGA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI8487