SI8806DB-T2-E1
detaildesc

SI8806DB-T2-E1

Vishay Siliconix

Product No:

SI8806DB-T2-E1

Manufacturer:

Vishay Siliconix

Package:

4-Microfoot

Datasheet:

pdf

Description:

MOSFET N-CH 12V 4MICROFOOT

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 5631

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.21

    $0.21

  • 10

    $0.18375

    $1.8375

  • 50

    $0.1575

    $7.875

  • 100

    $0.144375

    $14.4375

  • 500

    $0.137813

    $68.9065

  • 1000

    $0.13125

    $131.25

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 43mOhm @ 1A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package 4-Microfoot
Drain to Source Voltage (Vdss) 12 V
Power Dissipation (Max) 500mW (Ta)
Series TrenchFET®
Package / Case 4-XFBGA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI8806