SIA112LDJ-T1-GE3
detaildesc

SIA112LDJ-T1-GE3

Vishay Siliconix

Product No:

SIA112LDJ-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SC-70-6

Datasheet:

pdf

Description:

N-CHANNEL 100-V (D-S) MOSFET POW

Quantity:

Delivery:

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Payment:

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In Stock : 3782

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.380688

    $0.380688

  • 10

    $0.333102

    $3.33102

  • 50

    $0.285516

    $14.2758

  • 100

    $0.261723

    $26.1723

  • 500

    $0.249827

    $124.9135

  • 1000

    $0.23793

    $237.93

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 355 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SC-70-6
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2.9W (Ta), 15.6W (Tc)
Series TrenchFET®
Package / Case PowerPAK® SC-70-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 8.8A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIA112