SIA4265EDJ-T1-GE3

Vishay Siliconix

Product No:

SIA4265EDJ-T1-GE3

Manufacturer:

Package:

PowerPAK® SC-70-6

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Description:

P-CHANNEL 20-V (D-S) MOSFET POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1180 pF @ 0 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	PowerPAK® SC-70-6
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2.9W (Ta), 15.6W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7.8A (Ta), 9A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)