SIDR140DP-T1-RE3
detaildesc

SIDR140DP-T1-RE3

Vishay Siliconix

Product No:

SIDR140DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Datasheet:

pdf

Description:

N-CHANNEL 25-V (D-S) MOSFET

Quantity:

Delivery:

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In Stock : 2226

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.712813

    $1.712813

  • 10

    $1.541531

    $15.41531

  • 50

    $1.37025

    $68.5125

  • 100

    $1.198969

    $119.8969

  • 500

    $1.164713

    $582.3565

  • 1000

    $1.141875

    $1141.875

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8150 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.67mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 250µA
Supplier Device Package PowerPAK® SO-8DC
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 79A (Ta), 100A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)