SIDR220EP-T1-RE3
detaildesc

SIDR220EP-T1-RE3

Vishay Siliconix

Product No:

SIDR220EP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Datasheet:

pdf

Description:

N-CHANNEL 25 V (D-S) 175C MOSFET

Quantity:

Delivery:

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In Stock : 4535

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.374312

    $2.374312

  • 10

    $2.136881

    $21.36881

  • 50

    $1.89945

    $94.9725

  • 100

    $1.662019

    $166.2019

  • 500

    $1.614532

    $807.266

  • 1000

    $1.582875

    $1582.875

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10850 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.58mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 250µA
Supplier Device Package PowerPAK® SO-8DC
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 6.25W (Ta), 415W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 92.8A (Ta), 415A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +16V, -12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)