SIDR570EP-T1-RE3
detaildesc

SIDR570EP-T1-RE3

Vishay Siliconix

Product No:

SIDR570EP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Datasheet:

pdf

Description:

N-CHANNEL 150 V (D-S) 175C MOSFE

Quantity:

Delivery:

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Payment:

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In Stock : 3943

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.140897

    $2.140897

  • 10

    $1.926808

    $19.26808

  • 50

    $1.712718

    $85.6359

  • 100

    $1.498628

    $149.8628

  • 500

    $1.45581

    $727.905

  • 1000

    $1.427265

    $1427.265

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3740 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.9mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8DC
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 7.5W (Ta), 150W (Tc)
Series TrenchFET® Gen V
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta), 90.9A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)