SIDR622DP-T1-RE3
detaildesc

SIDR622DP-T1-RE3

Vishay Siliconix

Product No:

SIDR622DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Datasheet:

pdf

Description:

N-CHANNEL 150-V (D-S) MOSFET

Quantity:

Delivery:

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In Stock : 6161

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.598625

    $1.598625

  • 10

    $1.438762

    $14.38762

  • 50

    $1.2789

    $63.945

  • 100

    $1.119037

    $111.9037

  • 500

    $1.087065

    $543.5325

  • 1000

    $1.06575

    $1065.75

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1516 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 17.7mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package PowerPAK® SO-8DC
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 64.6A (Ta), 56.7A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)