SIDR626DP-T1-RE3
detaildesc

SIDR626DP-T1-RE3

Vishay Siliconix

Product No:

SIDR626DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Datasheet:

pdf

Description:

N-CHANNEL 60-V (D-S) MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 4828

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.038207

    $2.038207

  • 10

    $1.834387

    $18.34387

  • 50

    $1.630566

    $81.5283

  • 100

    $1.426745

    $142.6745

  • 500

    $1.385981

    $692.9905

  • 1000

    $1.358805

    $1358.805

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5130 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.4V @ 250µA
Supplier Device Package PowerPAK® SO-8DC
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 42.8A (Ta), 100A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)