SIDR626EP-T1-RE3
detaildesc

SIDR626EP-T1-RE3

Vishay Siliconix

Product No:

SIDR626EP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Datasheet:

pdf

Description:

N-CHANNEL 60 V (D-S) 175C MOSFET

Quantity:

Delivery:

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In Stock : 23

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.361555

    $2.361555

  • 10

    $2.1254

    $21.254

  • 50

    $1.889244

    $94.4622

  • 100

    $1.653088

    $165.3088

  • 500

    $1.605857

    $802.9285

  • 1000

    $1.57437

    $1574.37

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5130 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.74mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8DC
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 7.5W (Ta), 150W (Tc)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50.8A (Ta), 227A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)