SIE822DF-T1-GE3
detaildesc

SIE822DF-T1-GE3

Vishay Siliconix

Product No:

SIE822DF-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

10-PolarPAK® (S)

Datasheet:

pdf

Description:

MOSFET N-CH 20V 50A 10POLARPAK

Quantity:

Delivery:

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Payment:

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In Stock : 211

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.934257

    $1.934257

  • 10

    $1.740832

    $17.40832

  • 50

    $1.547406

    $77.3703

  • 100

    $1.35398

    $135.398

  • 500

    $1.315295

    $657.6475

  • 1000

    $1.289505

    $1289.505

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.4mOhm @ 18.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 10-PolarPAK® (S)
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Series TrenchFET®
Package / Case 10-PolarPAK® (S)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIE822