SIHA24N65EF-GE3
detaildesc

SIHA24N65EF-GE3

Vishay Siliconix

Product No:

SIHA24N65EF-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-220 Full Pack

Datasheet:

pdf

Description:

N-CHANNEL 650V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1369

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.183515

    $4.183515

  • 10

    $3.765164

    $37.65164

  • 50

    $3.346812

    $167.3406

  • 100

    $2.928461

    $292.8461

  • 500

    $2.84479

    $1422.395

  • 1000

    $2.78901

    $2789.01

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2774 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 156mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220 Full Pack
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 39W (Tc)
Series E
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)