SIHA6N65E-GE3
Vishay Siliconix
Product No:
SIHA6N65E-GE3
Manufacturer:
Package:
TO-220 Full Pack
Datasheet:
Description:
N-CHANNEL 650V
Quantity:
Delivery:
Payment:
In Stock : 1071
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.299375
$1.299375
10
$1.169437
$11.69437
50
$1.0395
$51.975
100
$0.909562
$90.9562
500
$0.883575
$441.7875
1000
$0.86625
$866.25
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 Full Pack |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 31W (Tc) |
| Series | E |
| Package / Case | TO-220-3 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
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