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SIHB053N60E-GE3
Vishay Siliconix
Product No:
SIHB053N60E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Datasheet:
Description:
E SERIES POWER MOSFET D2PAK (TO-
Quantity:
Delivery:
Payment:
In Stock : 619
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$10.34775
$10.34775
10
$9.312975
$93.12975
50
$8.2782
$413.91
100
$7.243425
$724.3425
500
$7.03647
$3518.235
1000
$6.8985
$6898.5
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3722 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 26.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 278W (Tc) |
| Series | E |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
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