SIHB100N60E-GE3
Vishay Siliconix
Product No:
SIHB100N60E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Datasheet:
Description:
MOSFET N-CH 600V 30A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 827
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.60297
$3.60297
10
$3.242673
$32.42673
50
$2.882376
$144.1188
100
$2.522079
$252.2079
500
$2.45002
$1225.01
1000
$2.40198
$2401.98
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1851 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 13A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 208W (Tc) |
| Series | E |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | SIHB100 |
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