SIHB11N80E-GE3
Vishay Siliconix
Product No:
SIHB11N80E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Datasheet:
Description:
MOSFET N-CH 800V 12A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 3133
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.697188
$2.697188
10
$2.427469
$24.27469
50
$2.15775
$107.8875
100
$1.888031
$188.8031
500
$1.834088
$917.044
1000
$1.798125
$1798.125
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 5.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | 800 V |
| Power Dissipation (Max) | 179W (Tc) |
| Series | E |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | SIHB11 |
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