SIHB17N80E-GE3
detaildesc

SIHB17N80E-GE3

Vishay Siliconix

Product No:

SIHB17N80E-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Datasheet:

pdf

Description:

MOSFET N-CH 800V 15A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 676

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.170725

    $5.170725

  • 10

    $4.653653

    $46.53653

  • 50

    $4.13658

    $206.829

  • 100

    $3.619508

    $361.9508

  • 500

    $3.516093

    $1758.0465

  • 1000

    $3.44715

    $3447.15

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2408 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 290mOhm @ 8.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D²PAK (TO-263)
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 208W (Tc)
Series E
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHB17