SIHB20N50E-GE3
detaildesc

SIHB20N50E-GE3

Vishay Siliconix

Product No:

SIHB20N50E-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Datasheet:

pdf

Description:

MOSFET N-CH 500V 19A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 1484

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.323125

    $2.323125

  • 10

    $2.090813

    $20.90813

  • 50

    $1.8585

    $92.925

  • 100

    $1.626187

    $162.6187

  • 500

    $1.579725

    $789.8625

  • 1000

    $1.54875

    $1548.75

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D²PAK (TO-263)
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 179W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number SIHB20