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SIHB22N65E-T1-GE3
Vishay Siliconix
Product No:
SIHB22N65E-T1-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Datasheet:
Description:
N-CHANNEL 650V
Quantity:
Delivery:
Payment:
In Stock : 613
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.405937
$3.405937
10
$3.065344
$30.65344
50
$2.72475
$136.2375
100
$2.384156
$238.4156
500
$2.316038
$1158.019
1000
$2.270625
$2270.625
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2415 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 227W (Tc) |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
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