SIHB24N65E-GE3
Vishay Siliconix
Product No:
SIHB24N65E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Datasheet:
Description:
MOSFET N-CH 650V 24A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 1061
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$4.193437
$4.193437
10
$3.774094
$37.74094
50
$3.35475
$167.7375
100
$2.935406
$293.5406
500
$2.851538
$1425.769
1000
$2.795625
$2795.625
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2740 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 12A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 250W (Tc) |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | SIHB24 |
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