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SIHB24N65EFT1-GE3
Vishay Siliconix
Product No:
SIHB24N65EFT1-GE3
Manufacturer:
Package:
TO-263 (D²Pak)
Datasheet:
Description:
N-CHANNEL 650V
Quantity:
Delivery:
Payment:
In Stock : 1660
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$4.2525
$4.2525
10
$3.82725
$38.2725
50
$3.402
$170.1
100
$2.97675
$297.675
500
$2.8917
$1445.85
1000
$2.835
$2835
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2774 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 12A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D²Pak) |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 250W (Tc) |
| Series | E |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
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