SIHB25N50E-GE3
Vishay Siliconix
Product No:
SIHB25N50E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Datasheet:
Description:
MOSFET N-CH 500V 26A TO263
Quantity:
Delivery:
Payment:
In Stock : 585
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.575125
$2.575125
10
$2.317613
$23.17613
50
$2.0601
$103.005
100
$1.802588
$180.2588
500
$1.751085
$875.5425
1000
$1.71675
$1716.75
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 12A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | 500 V |
| Power Dissipation (Max) | 250W (Tc) |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | SIHB25 |
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