SIHB33N60E-GE3
Vishay Siliconix
Product No:
SIHB33N60E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Datasheet:
Description:
MOSFET N-CH 600V 33A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 1058
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$4.370625
$4.370625
10
$3.933563
$39.33563
50
$3.4965
$174.825
100
$3.059438
$305.9438
500
$2.972025
$1486.0125
1000
$2.91375
$2913.75
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3508 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 16.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D²PAK (TO-263) |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 278W (Tc) |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
| Base Product Number | SIHB33 |
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