SIHB33N60EF-GE3
detaildesc

SIHB33N60EF-GE3

Vishay Siliconix

Product No:

SIHB33N60EF-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Datasheet:

pdf

Description:

MOSFET N-CH 600V 33A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 638

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.62023

    $5.62023

  • 10

    $5.058207

    $50.58207

  • 50

    $4.496184

    $224.8092

  • 100

    $3.934161

    $393.4161

  • 500

    $3.821756

    $1910.878

  • 1000

    $3.74682

    $3746.82

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3454 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 98mOhm @ 16.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D²PAK (TO-263)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 278W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number SIHB33