SIHD180N60E-GE3
Vishay Siliconix
Product No:
SIHD180N60E-GE3
Manufacturer:
Package:
D-Pak
Datasheet:
Description:
MOSFET N-CH 600V 19A TO252AA
Quantity:
Delivery:
Payment:
In Stock : 1517
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.029702
$2.029702
10
$1.826732
$18.26732
50
$1.623762
$81.1881
100
$1.420792
$142.0792
500
$1.380198
$690.099
1000
$1.353135
$1353.135
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 9.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D-Pak |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 156W (Tc) |
| Series | E |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | SIHD180 |
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