SIHD2N80E-GE3

Vishay Siliconix

Product No:

SIHD2N80E-GE3

Manufacturer:

Package:

TO-252AA

Datasheet:

Description:

MOSFET N-CH 800V 2.8A DPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	315 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.75Ohm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-252AA
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	62.5W (Tc)
Series	E
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHD2