SIHD3N50D-GE3
detaildesc

SIHD3N50D-GE3

Vishay Siliconix

Product No:

SIHD3N50D-GE3

Manufacturer:

Vishay Siliconix

Package:

D-Pak

Datasheet:

pdf

Description:

MOSFET N-CH 500V 3A TO252AA

Quantity:

Delivery:

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Payment:

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In Stock : 1927

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.648648

    $0.648648

  • 10

    $0.567567

    $5.67567

  • 50

    $0.486486

    $24.3243

  • 100

    $0.445946

    $44.5946

  • 500

    $0.425675

    $212.8375

  • 1000

    $0.405405

    $405.405

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.2Ohm @ 2.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package D-Pak
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 69W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHD3