SIHFBC40AS-GE3
detaildesc

SIHFBC40AS-GE3

Vishay Siliconix

Product No:

SIHFBC40AS-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Datasheet:

pdf

Description:

MOSFET N-CHANNEL 600V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 567

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.388205

    $1.388205

  • 10

    $1.249384

    $12.49384

  • 50

    $1.110564

    $55.5282

  • 100

    $0.971743

    $97.1743

  • 500

    $0.943979

    $471.9895

  • 1000

    $0.92547

    $925.47

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1036 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D²PAK (TO-263)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 125W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)