SIHFL9110TR-GE3
detaildesc

SIHFL9110TR-GE3

Vishay Siliconix

Product No:

SIHFL9110TR-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-223

Datasheet:

pdf

Description:

MOSFET P-CH 100V 1.1A SOT223

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 4761

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.3192

    $0.3192

  • 10

    $0.2793

    $2.793

  • 50

    $0.2394

    $11.97

  • 100

    $0.21945

    $21.945

  • 500

    $0.209475

    $104.7375

  • 1000

    $0.1995

    $199.5

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.2Ohm @ 660mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package SOT-223
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Series -
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.1A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SIHFL9110